Multi-channel storage FET - has floating storage gate surrounded by insulator and has control and selector gates

摘要

The n-channel storage field-effect transistor has a storage gate (G1) whose charge is reversed by the injection of electrons and which can be charged to a negative potential in relation to the uncharged state and can act upon the source-drain stage. A controllable control gate acts capactively on the storage gate. The storage gate and the channel (K) are influenced by the control gate (G2) which is connected to a selector gate (Ga2) which influences the furthr channel region (Ka) via a conductive junction (LV) made apart from an auxiliary regions (HS).