Electron beam exposure apparatus.

摘要

An electron beam exposure apparatus provides a basic pattern data memory for storing data corresponding to the dimensions and the positions of patterns of a basic unit pattern which frequently appears as a unit in patterns to be exposed on a wafer, and a central processor provided with an additional memory system which stores data corresponding to the positions at which the basic unit pattern is to be exposed. This apparatus determines the position of the basic unit pattern by adding from the basic pattern data memory and data from the additional memory system through the central processor in accordance with a command from the central processor. Thereafter, data corresponding to the dimensions of the patterns in the basic unit patterns from the basic pattern data memory are fed as an input to a deflection system. As a result, the apparatus applies electron beam deflection signals which are produced by using the obtained data corresponding to the positions and the dimensions of the basic unit patterns, to beam deflecting means.