| 摘要 |
PURPOSE:To realize a good-reproducibility process by independently adding impurities to poly-Si for the formation of the electrode of a semiconductor device and to poly-Si for the formation of a resistor. CONSTITUTION:Onto the thick field oxidized film, polysilicon body 291 is provided which becomes a integrated resistor. At the time of forming source-drain region 34, impurities are diffused into polysilicon layer 292 as a gate electrode, but polysilicon body 291 is masked with layers 31, 32 and 33. To form region 34 next, oxidized film 35 formed on the entire surface of the substrate is used as an ion-injection protective film, and ions are injected into the entire surface selecting the kind of ions and energy so that the maximum fly of ions will be less than the thickness of the protective film, thereby partially or entirely converting polysilicon body 291 into the desired integrated resistor. |
