| 摘要 |
PURPOSE:To reduce the number of used masks by using a memory medium stored with pattern information when forming a read-only semiconductor memory on a semiconductor subtrate, and by forming a mask for the formation of each element region through electron-beram expousure. CONSTITUTION:Insulating separation region 6 is provided to P-type semiconductor substrate 1, the entire surface is covered with insulating film 4 including insulating regions C21 and C22, and on it, mask layer 21 of a photo-resist film is formed. To form the pattern of mask layer 21, a memory medium stored proviously with pattrn information is used and fixed mask layer 21 is generated through electron-beam exposure. Then, this mask layer 21 is used to form a plural number of N<+>-type source regions 2s and N<+>-type drain region 2d in substrate 1 through ion implantation and after mash layer 21 is removed, wiring layers B1 to B4 are adhered onto film 4; and then, the surface is covered with inter-layer insulating film 5 and electrode-fitting openings are formed which reach regions. |
