| 摘要 |
PURPOSE:To establish the level shift circuit of small size. CONSTITUTION:Taking that the ground potential as 0(V) and low potential voltage as -V1(V), I N1,I N2=0(V) and CNT=-V2(V), and PMOSFET 10, 11 and NMOS FET 12 AND 13 are conductive. Next, at precharge condition, CNT=0(V) and EFT 12 and 13 are conductive, and the load capacitors 14, 15 are charged to -V2(V). Next, when CNT is again at -V2(V) and FEt 12 and 13 are again turned off. With this, precharge is finished. Further, when the data, for example, IN 1=''L''(-V1(V)) and IN2 =''H'' (0(V)) are fed to IN1 and IN2, FET 10 is conductive and FET 11 remains unconductive. Accordingly, the charge stored in the load capacitor 14 is discharged and OUT 1 at ''H'' level. On the other hand, since the charge precharged is remained in the load capacitor 15, OUT 2=''L'' is kept, and even if the data of ON1 and ON2 are returned to ''H'' of normal condition again, this condition is not changed. |
