| 摘要 |
PURPOSE:To obtain the light guide which has a less propagation loss even with light of a short wavelength with good reproducibility by using a material subjected to lattice matching with a substrate and a III-V compd. semiconductor having excellent crystallinity to form a substrate side clad layer and a light guide layer and providing a II-VI compd. semiconductor thereon. CONSTITUTION:The light guide of the light guide having metal electrodes 105, 106 is formed by laminating the clad layer 102 consisting of the p type III-V compd. semiconductor and the light guide layer 103 consisting of the n type III-V compd. semiconductor having the refractive index larger than the refractive index of the clad layer on the p type III-V compd. semiconductor substrate 101. The clad layer 104 consisting of the n type II-VI compd. semiconductor having the refractive index smaller than the refractive index of the light guide 103 is formed on a part on the light guide layer. The light guide layer 103 of extremely low loss is obtd. in this way. |
