| 发明名称 |
Method of manufacturing a field effect transistor |
| 摘要 |
The exposed surface of a semi-insulating compound semiconductor substrate is anodized while light is irradiated to the exposed surface to form a gate insulating film on the substrate between source and drain regions.
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| 申请公布号 |
US4157610(A) |
申请公布日期 |
1979.06.12 |
| 申请号 |
US19770825720 |
申请日期 |
1977.08.18 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO LTD |
发明人 |
IKOMA, TOSHIAKI;KAMEI, KIYOO;TOKUDA, HIROKUNI |
| 分类号 |
H01L21/316;H01L21/336;H01L29/78;(IPC1-7):B01J17/00 |
主分类号 |
H01L21/316 |
| 代理机构 |
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代理人 |
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| 地址 |
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