发明名称 MEMORY UNIT
摘要 <p>PURPOSE:To improve reliability as a memory unit, by simplifying the manufacture processes of an IC remarkably and by making small a fuse writing fusion-cut current by forming a fuse material directly on a circuit wiring material through adhesion and photo etching. CONSTITUTION:Onto substrate 6, insulating coating 15 is adhered, on which wiring materials 13 and 17, and fuse bodies 14 and 19 are constituted by photo-etching. The specific resistance of the fuse material should be higher than that of the wiring body, and it is made thinner than the wiring body (for example,about 1/100); and then, the fuse bodies are formed on the circuit wiring bodies through direct adhesion and photoetching, so that the manufacture processes for forming a transistor and fuse on the same chip can be simplified remarkably. Further, more effect can be obtained when the fuse body and wiring body employ the same material.</p>
申请公布号 JPS5472929(A) 申请公布日期 1979.06.11
申请号 JP19770140447 申请日期 1977.11.22
申请人 SUWA SEIKOSHA KK 发明人 KODAIRA TOSHIMOTO
分类号 G11C17/06;G11C17/14;(IPC1-7):11C17/06 主分类号 G11C17/06
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