发明名称 ELECTRON BEAM RESIST
摘要 PURPOSE:To enlarge difference in solubility of irradiated parts and nonirradiated parts, if any slight irradiation amount, in spite of cross linking type, by incorporating a copolymer consisting mainly of a depolymerization type polymer. CONSTITUTION:A monomer Mo polymerizing to form an electron beam depolimerizing type polymer, such as methyl methacrylate MMA, and a 1-15mol% on Mo, of a monomer M1 having a functional group R1 retained even after polymerization, such as methacrylic amide are copolymerized to form a copolymer I. MMA and a monomer M2 having a functional group R2 capable of combining with group R1 of monomer, M1 such as glycidyl methacrylate, in an amount of 1-15mole% of MMA are copolymerized to form a copolymer II. These copolymers I and II are dissolved in a proper solvent and the undissolved part is filtered off. This resist is converted into a three-dimensional structure by heat treatment and insolubilized, and this, inturn, is converted into a two-dimensional polymer by electron beam irradiation.
申请公布号 JPS5472036(A) 申请公布日期 1979.06.09
申请号 JP19770139320 申请日期 1977.11.18
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 HIBINO KUNIO;MORIMOTO TAKAKATSU;TAKEYAMA KENICHI
分类号 G03F7/20;B41M5/00;B41M5/26;G03C1/72;G03F7/004;G03F7/039;H01L21/027;H01L21/312 主分类号 G03F7/20
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