| 摘要 |
1,102,989. Silicon ribbon. TEXAS INSTRUMENTS Inc. 10, Dec., 1965 [14, Dec., 1964; 26, April, 1965], No. 52667/65. Heading B1S. A monocrystalline ribbon of silicon is continuously formed by pulling molten silicon through a shaping die and then through a solidifying orifice together with a surrounding stream of cooling gas. The die, which may be cooled by impingement of gas may be of boron, silicon, titanium, zirconium, or tantalum nitride. The resulting ribbon may have a thickness of 5-50 mil and a width of 0.1-1 inch. According to Fig. 3, a rotating charge rod 11 is fed into an outer chamber 10 to a molten zone 14, melt being pulled (with the aid of a seed crystal) through a die 32, heat reflector 34 of ceramic material, and orifice 18 of an inner chamber 17. Cooling gas supplied through inlet 19 passes through inner chamber 17 together with the resulting ribbon. Outer chamber 10 is surrounded by an induction coil 13 for molten zone 14 and a preheater 30 and an after heater 31. |
