| 摘要 |
PURPOSE:To form Schottky contact electrodes which are of a high barrier height and will not peel from semiconductor by depositing gold and aluminum alloy on the surface of the semiconductor substrate. CONSTITUTION:Schottky contact electrodes composed of AuAl alloy of Au:Al = 1:1 to 20:1, preferably 4:1 are formed on an n type semiconductor and those composed of AuAl alloy of Au: Al = 1 to 1;20, preferably 1:4 on a p type semiconductor. This enables the Schottky contact electrodes which will not peel from the semiconductor and whose barrier height is as high as Au Schottky barriers to be obtained. |
