| 摘要 |
PURPOSE:To realize a high concentration of the semiconductor device by applying the n-phase transfer clock free from the mutual overlap to the transfer electrode and also applying the inverted n-phase transfer clock to the storage electrode respectively. CONSTITUTION:Gate insulating film 2 is coated on Si substrate 1, and storage electrodes 3-6 which store and transfer the signal charge with separation by insulating film 11 connecting to film 2 plus transfer electrodes 7-10 which transfer the signal charge are distributed alternately an film 2. Then transfer clocks phi1S,phi2S, phi3S and phi4S are applied to electrodes 3-6 each; while transfer clocks phi1T, phi2T,phi3T and phi4T are supplied to transfer electrodes 7-10 respectively. Such application of the transfer clocks is repeated subsequently until the n-phase. In this case, clock phi1Sturns clock phi1T into the waveform which is inverted with a fixed delay time, with the state of other clock groups set into the similar way. Thus, the concentration can be enhanced for the device without decreasing the transfer enable charge amount. |
