发明名称 MEMORY UNIT
摘要 <p>PURPOSE:To decrease the blow current of the fuse to ensure the fuse blow and enhance the reliability for the fuse-type memory unit, by providing the fuse blowing part formed on the insulator film at the stage error part of the insulator film. CONSTITUTION:In the fuse-type memory unit, insulator film 15 containing stage error 13 is coated on the upper surface of substrate 14, and fuse body 16 is formed crossing stage error 13. After this, passibation insulator film 17 plus external wiring 18 and 19 are formed in order to secure contact with body 16. In this structure, the effective thickness of 16 is reduced at 13, so the blow current of 16 is decreased to ensure the blowing of 16.</p>
申请公布号 JPS5460834(A) 申请公布日期 1979.05.16
申请号 JP19770127937 申请日期 1977.10.25
申请人 SUWA SEIKOSHA KK 发明人 KODAIRA TOSHIMOTO
分类号 G11C17/06;G11C17/14;G11C17/16 主分类号 G11C17/06
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