| 摘要 |
PURPOSE:To take an accurate measurement even when a fine pattern is made of a wiring material such as photoresist, silicon, and silicide by irradiating the fine pattern with positive ions from an ion gun when an electron beam is scanned on the fine pattern. CONSTITUTION:An ion source admitted from an ion source 50 is ionized by filament 70 in an ionization chamber 100 and applied with an acceleration voltage from an acceleration voltage source 60 to pass through an electron lens 80, thereby irradiating a semiconductor substrate 1 with an ion beam 90. Therefore, excessive electrons are neutralized with the ion beam 90 to the original slope line 6 of the electrostatic charging of the fine pattern 2, so the edge 2B of the fine pattern 2 can accurately be measured as an edge position 110. Consequently, even when the fine pattern 2 is made of the wiring material such as photoresist, silicon, and silicide, a charge-up phenomenon is prevented without causing any decrease in resolution nor deterioration in S/N and the pattern for eliminating the deformation of a secondary electron signal waveform is accurately measured. |
