INSULATED GATE FIELD EFFECT TRANSISTOR

摘要

Title of The Invention: Insulated Gate Field Effect Transistor of The Disclosure An insulated gate field effect transistor wherein a source region and drain region having the conduction type opposite to that of the semiconductor substrate of one conduction type being formed in said semiconductor substrate at a distance, the surface of said semiconductor substrate in the channel region between said source region and drain region being provided with an insulated gate electrode, the first and the second high conduction regions having the same conduction type as that of said semiconductor and higher conductivity being formed to conform to the predetermined longitudinal length along the channel and arranged so as to engage with the entire area of the source region and drain region or engage with the portion of the source region and drain region in the channel region and characterized by reduced threshold voltage drop and elimination of dependency of threshold voltage on the processing precision as a result of shortened channel.