| 摘要 |
PURPOSE:To grow a uniform epitaxial layer, by growing the first epitaxial layer on the surface of a substrate crystal, by washing the adhered molten liq. through contact with the senond layer-forming molten liq., then by contact of the first epitaxial layer with fresh motlen liq. in order to decrease the mixing of the both molten liqs. CONSTITUTION:Molten liq. vessel 16-19 formed by a molten-liq. vessel plate 2 are made to unite with molten-liq.-dividing spaces 12-15 formed by a molten-liq. 4-7 fed to the vessel 16-19. Then the plate 2 is moved in the direction of an arrow, so that portions of the liq. 4-7 are divided into the spaces 12-15 by the bottom of the plate 2 facing the vessel 16-19, simultaneously united vessels 9-11 are filled with the liq. 5-7. The plate 1 is moved so as to make the substrate crystal 3 contact with the liq. 4, and cooled showly to grow the first epitaxial layer on the surface of the crystal 3. Hereafter, the plate is moved once again to make the crystal 3 pass through the liq. 5 of the vessel 9 in order to wash it, then it is made to contact with the liq. 5 divided into the space 13 to cause the second layer to grow. The third and fourth growth are conducted in the similar way. |
