| 摘要 |
CCDs and bipolar transistors are formed together on a silicon chip. For n channel CCDs and npn transistors, only a single extra diffusion is necessary in addition to the diffusions used for the CCDs alone. This step is diffusion of n+ collector wells, and is performed before CCD channel stop-transistor base diffusion. For p channel CCDs and pnp transistors, two extra diffusions are necessary and are: diffusion of a p collector wells, and diffusion of n+ base contracts; the extra diffusions may both be performed before CCD channel stop-transistor base diffusion, or the n+ base contact diffusion may be performed thereafter.
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