| 摘要 |
PURPOSE:To stabilize the oscillations and to obtain the multiplied wave in a high efficiency by distributing the transistor at the place distant by 2/16lambda-7/16lambda away from the equivalent filter surface of the stabilized cavity forming a superhigh frequency oscillator. CONSTITUTION:Cavity CV1 is combined to the base of transistor TR; the collector of TR is connected to cavity CV2; and the oscillation multiplication output is drawn out via CV2. For instance, in case original oscillation frequency fosc is set to 2GHz is extracted thorugh 3-multiplication, CV1 and CV2 are resonated with 2GHz and 6GHz. For such oscillation multiplier, the phase of each multiplied wave must be taken into consideration, and also the impedance of CV1 is desired to be under the short state against the fundamental wave, 2-multiplied wave and 3-multiplied wave of the original oscillation respectively when viewed from TR. In this connection, the TR is located at the place distant by 5/16lambda-7/16lambda (lambda=fundamental wavelength) away from the equivalent filter surface of CV1. |
