发明名称 |
HIGH VOLTAGE HIGH CURRENT SCHOTTKY BARRIER SOLAR CELL |
摘要 |
A Schottky barrier solar cell is disclosed, consisting of a layer of wide band gap semiconductor material such as AlGaAs on which a very thin film of semi-transparent metal is deposited to form a Schottky barrier. The layer of the wide band gap semiconductor material is on top of a layer of narrower band gap semiconductor material, to which one of the cell's contacts may be attached directly or through a substrate. The cell's other contact is a grid structure which is deposited on the thin metal film. |
申请公布号 |
CA1053353(A) |
申请公布日期 |
1979.04.24 |
申请号 |
CA19750231928 |
申请日期 |
1975.07.21 |
申请人 |
NATIONAL AERONAUTICS AND SPACE ADMINISTRATION |
发明人 |
STIRN, RICHARD J. |
分类号 |
H01L31/04;H01L31/00;H01L31/06 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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