Semiconductor electric circuit device with plural-layer aluminum base metallization

摘要

A pure aluminum outer layer is provided to facilitate bonding with aluminum bonding wires having a diameter of 50 mu m or greater without formation of troublesome slivers upon bonding. Beneath that a copper-bearing aluminum layer with 1 to 4% copper content is provided. A third layer beneath the copper-bearing layer containing up to 1% silicon can be added below the copper-bearing layer to promote adhesion at contact window edges.