发明名称 |
Semiconductor device having electrode-lead layer units of differing thicknesses |
摘要 |
A semiconductor device comprising electrode-lead layer units wherein at least one of said electrode-lead layer units or at least one portion of same of said units occupying certain positions in the semiconductor device is made thicker than the remainder, thereby enabling circuit elements to be integrated with a high density, namely, rendering the entire semiconductor device compact.
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申请公布号 |
US4151546(A) |
申请公布日期 |
1979.04.24 |
申请号 |
US19780937569 |
申请日期 |
1978.08.28 |
申请人 |
TOKYO SHIBAURA ELECTRIC CO LTD |
发明人 |
KAWAGAI, KENJI;NAKADA, YASUO;YOSHIDA, SHIGEKI |
分类号 |
H01L23/528;H01L29/417;(IPC1-7):H01L23/48;H01L29/46;H01L29/54 |
主分类号 |
H01L23/528 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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