| 摘要 |
PURPOSE:To obtain the high speed IC with a simple constitution by preventing the supersaturation of the inverter transistors constituting the IC and delaying the propagation delay time. CONSTITUTION:An N<-> type layer 6 is grown on an N<+> type semiconductor substrate 7 and here P type collector/base regions 2, 3 are respectively diffusion-formed here. Next, an N<+> type collector region 4 and an N<+> type retion 10 as well as an N<+> type collector region 5 and an N<+> type region 11 are provided respectively within these regions 2, 3, and a P type injector region 1 and P type regions 8, 9 are diffusion-formed in the layer 6 sandwiched by the regions 2, 3 to constitute the IC. In this way, the regions 8, 9, 10, 11 are newly provided in the IC and the regions 8 and 10 as well as 9 and 11 are connected while being insulated from the layer 6 with the insulation film deposited on the surface and at the same time the re gions 3 and 4 are also connected. Then, the respectively three lateral PNP transistors of Tpla' Tplb' Tplc and Tp2a, Tp2b' Tp2c bocome of hihg speed in operation characteristics. |
