| 摘要 |
PURPOSE:To provide a method of manufacturing semiconductor unit, which comprises the steps of etching a plurality of metal layers successively from the upper layer to the lower layer, and then forming external conecting electrodes with no overhand on te upper metal layer by way of etching with etching liquid for etching only the upper layer, while a mask pattern being attached thereon. CONSTITUTION:Insulating layer 22, wiring layer 23 made of aluminum or the like, chip passivation film 24, Ni-Cr layer 25, Pd layer 26, Au layer 28, and photo-resist film 27 are successively placed on semiconductor substrate 21, ad then layers 28, 26 and 25 are subjected to etching successively. Thereafter, overhanging portions of layer 28 as shownin fig. (c) are removed by carrying out etching in use of an etching liquid such as aqueous liquid of iodine and ammonium iodide, that etches only the Au layer 28 (inclusive of layer 26), while the photo-esist film 27 being attached thereon. Finally, after removing resist film 27, bonding wires are attached onto the surface of au layer 28. |
