| 摘要 |
PURPOSE:To obtain a fine pattern in a short time by attaining electrolytic etching after providing a coating such as a resist which resists against an electrolyte used for the anodization of a semiconductor surface. CONSTITUTION:Ethylene glycol or propylene glycol is mixed with a tartaric-acid solution of 3% to a volume rate of 1:2 to 4, thereby obtaining electrolyte 2. Next, proper container 1 is filled with this electrolyte 2. Next, proper container 1 is filled with this electrolyte 2 and cathode 4 of platinum or gold with external connecting lead 3 and sample 6 with external connecting lead 5 are both dipped, while being confronted each other, in the solution. This sample 6 is obtained by providing a photo resist pattern onto a lamination metal film of Cr and Au adhered into the fixed region of a P type GaAs substrate surface. In this constitution, electrolytic etching at the density of 100 to 500mA/cm<2> causes the anodization of the substrate and the exposed part of the metal film disappears perfectly. |
