发明名称 |
N-channel memory field effect transistor |
摘要 |
N-channel memory FET has only one erasing projection ("tongue") on the floating memory gate. The tongue covers a special transfer region in the substrate, insulated from drain and source. The erasing of the memory gate occurs via this transfer region. There is separation of transfer region potential and source/drain potential.
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申请公布号 |
US4148044(A) |
申请公布日期 |
1979.04.03 |
申请号 |
US19770834425 |
申请日期 |
1977.09.19 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
ROESSLER, BERNWARD |
分类号 |
H01L21/8247;H01L29/788;H01L29/792;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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