| 发明名称 |
COMPOSITE FIELD EFFECT TRANSISTOR OF JUNCTION TYPE |
| 摘要 |
PURPOSE:To improve high-frequency characteristics by separating a JFET on the surface of a N<->layer by a N<+> layer and by providing an electrode on its reverse surface. |
| 申请公布号 |
JPS5437586(A) |
申请公布日期 |
1979.03.20 |
| 申请号 |
JP19770103795 |
申请日期 |
1977.08.29 |
| 申请人 |
NIPPON ELECTRIC CO |
发明人 |
SAKAI KIYOSHI |
| 分类号 |
H01L29/80;H01L21/337;H01L27/098;H01L29/808 |
主分类号 |
H01L29/80 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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