| 发明名称 |
MANUFACTURE OF SEMICONDUCTOR |
| 摘要 |
<p>PURPOSE:To manufacture a LED by forming a p-type layer of desired thickness in a short time while preventing Ge from infiltrating into the p-type layer.</p> |
| 申请公布号 |
JPS5432991(A) |
申请公布日期 |
1979.03.10 |
| 申请号 |
JP19770099332 |
申请日期 |
1977.08.18 |
| 申请人 |
SANYO ELECTRIC CO |
发明人 |
NAKADA TOSHITAKE |
| 分类号 |
H01L21/22;H01L21/225;H01L21/324;H01L33/30;H01L33/34 |
主分类号 |
H01L21/22 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
