| 摘要 |
A thermally and electrically conductive metal lead member is joined to the refractory metal contact member of a semiconductor device using a brazing alloy comprising on a weight basis about 80-89 percent copper, about 5-15 percent silver, and about 4-6 percent phosphorus. The contact member/semiconductor joint may be formed in an inert atmosphere at the same time and at the same temperature as the contact member/lead member joint. |
