| 发明名称 |
SEMICONDUCTOR NONVOLATILE MEMORY DEVICE |
| 摘要 |
<p>PURPOSE:To obtain a nonvolatile memory which operates on a low voltage-current action with a small amount of the power consumption, by constituting the write/read control circuit of the MOS memory cell with CMOS.</p> |
| 申请公布号 |
JPS5428577(A) |
申请公布日期 |
1979.03.03 |
| 申请号 |
JP19770093841 |
申请日期 |
1977.08.04 |
| 申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
KIYOUMASU MIKIO;NAKAO YOSHIHARU |
| 分类号 |
G11C17/00;G11C16/06;G11C16/10;H01L21/8234;H01L21/8247;H01L27/088;H01L29/423;H01L29/788;H01L29/792 |
主分类号 |
G11C17/00 |
| 代理机构 |
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代理人 |
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