HF phase shifter for phase controlled antennae - has active semiconductor amplifier system enabling larger angle of phase shift due to negative resistance

摘要

The high frequency phase shifter has an active semi-conductor amplifier system, such as a field-effect transistor, or an IMPATT diode, whose negative resistance has a greater reactance component. This enables a change of the amplified output signal phase within a greater angle by the control of the operating point. If the system uses a field-effect transistor, the operational point control is attained by different adjustment of its gate voltage. The phase shifter may be used in a module integrated with the associated radiators. The system reduces the antenna losses, particularly when the negative resistance is optimised to obtain the greatest possible angular region.