| 发明名称 |
MOS DYNAMIC MEMORY DEVICE |
| 摘要 |
PURPOSE:To reduce the area of a memory cell with the rewriting level prevented from decreasing by one, by improving a sense circuit part. |
| 申请公布号 |
JPS5423338(A) |
申请公布日期 |
1979.02.21 |
| 申请号 |
JP19770088025 |
申请日期 |
1977.07.22 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
OGURA ISAO;OOUCHI KAZUNORI;MASUOKA FUJIO;FURUYAMA TOORU |
| 分类号 |
G11C11/419;G11C11/409;G11C11/4091 |
主分类号 |
G11C11/419 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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