INTEGRERAD KRETS MED DIELEKTRISK ISOLERING OCH METOD FOR DESS FRAMSTELLNING

摘要

Structure: An integrated circuit structure with full dielectric isolation comprising a supporting substrate having a planar surface of dielectric material and a semiconductor layer on said dielectric surface which forms a planar interface with the surface. Regions of oxidized silicon extend through the layer from said interface, surrounding and dielectrically isolating pockets of silicon in the layer; the oxidized silicon regions extend to the upper surface of the semiconductor layer where they are substantially co-planar with the silicon pockets. The devices of the integrated circuit are formed in said silicon pockets.