HALBLEITERBAUELEMENT MIT EINER MOS-KAPAZITAET

摘要

The semiconductor element forms an integrated circuit and consists of a substrate with on opposite conductivity semiconductor layer, coated with an insulating film. On the latter is provided a second conductive layer, between which and a highly doped second conductivity zone, which bounds the surface of the first semiconductor layer(2), is formed a MOS capacitance. Underneath the highly doped zone (3) in the first semiconductor layer is provided a surrounding zone (10) of the conductivity, which is pref. provided with a terminal electrode (4). A further terminal electrode (12) may be arranged on the first semiconductor layer. This arrangement reduces parasitic capacitance between the MOS capacitance and the semiconductor substrate, without any further measures.