发明名称 |
SOLAR BATTERY AND METHOD OF PRODUCING SAME |
摘要 |
The specification describes an improved III-V compound solar cell structure and fabrication process therefor wherein a P-type layer of gallium aluminum arsenide is epitaxially grown on an N-type gallium arsenide substrate to form a P-type region and a PN junction in the substrate. Controlled amounts of beryllium are introduced into both the epitaxial layer and the substrate, either during epitaxial growth or by using beryllium ion implantation techniques subsequent to the P-type epitaxial growth step. The homojunction-heterostructure device thus formed exhibits improved power conversion efficiencies in excess of 17%. |
申请公布号 |
JPS549593(A) |
申请公布日期 |
1979.01.24 |
申请号 |
JP19780053273 |
申请日期 |
1978.05.02 |
申请人 |
HUGHES AIRCRAFT CO |
发明人 |
JII SANJIIBU KAMASU;KAARU ERU ANDAASON |
分类号 |
H01L31/04;H01L21/22;H01L31/0304;H01L31/0693 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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