Topography simulation for semiconductor reflux processes - indicating potential of cells based upon vol. and surface growth ratio

摘要

Specifically the topography of a borphosphorsilicate, BPSG, (1) glass is described by wire segments (2). When raised to more than 600 deg. Celsius the material becomes fluid. The chemical potential of the cell is described by the ratio of volume growth in comparison with the surface growth. The movement of the iso concn. surface is described in terms of the chemical potential simulation. USE/ADVANTAGE - Simulates characteristic of Iso concn. in semiconductor mfg. industry.