| 发明名称 |
MANUFACTURE FOR SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To decrease the specific resistivity in the substrate to 3% or less, by diffusing gold to the semiconductor substrate made by neutron radiation by 2 x 10<14> atoms/cm<3>. |
| 申请公布号 |
JPS547885(A) |
申请公布日期 |
1979.01.20 |
| 申请号 |
JP19770073542 |
申请日期 |
1977.06.20 |
| 申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
GAMOU HIROSHI;YAMADA TOMIHISA |
| 分类号 |
H01L21/322;H01L29/167;H01L29/32;H01L29/744 |
主分类号 |
H01L21/322 |
| 代理机构 |
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代理人 |
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| 地址 |
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