Integrated single transistor storage element - has strip-shaped zone leading to capacitor electrode and uses two reference voltages, one applied to capacitor and other to diffusion zone

摘要

The storage element has a selector MISFET and a MIS storage element on a doped SC layer. The storage capacitor electrode to which the signal voltage to be stored is applied, is connected to the FET doped drain zone. This electrode consists of a first conducting layer on top of a first insulating layer covering the SC layer surface. A strip-shaped zone doped in opposite sense to the SC layer is embedded in it, and a first reference potential is applied to it. It leads to the opposite electrode of the storage capacitor on the SC layer surface. A second conducting layer (13) is provided on a further insulating layer (12) covering the first conducting layer (7). It forms the capacitor (7, 8, 13) second electrode to which a second reference voltage (UB2) is applied.