| 发明名称 |
MANUFACTURE OF SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To produce the high-speed I<2>L through production of a high dierectric strength transistor and I<2>L within the same chip by utilizing one of the three epitaxial layers for the diffusion source. |
| 申请公布号 |
JPS545391(A) |
申请公布日期 |
1979.01.16 |
| 申请号 |
JP19770069826 |
申请日期 |
1977.06.15 |
| 申请人 |
HITACHI LTD |
发明人 |
NIINO KAORU |
| 分类号 |
H01L21/8226;H01L27/02;H01L27/082;H03K19/091 |
主分类号 |
H01L21/8226 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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