发明名称 |
Selective dry etching of substrates |
摘要 |
Magnesium oxide is deposited on a substrate as a mask with a pattern of openings which exposes a corresponding pattern of a surface of a substrate which is to be subjected to dry etching.
|
申请公布号 |
US4132586(A) |
申请公布日期 |
1979.01.02 |
申请号 |
US19770862262 |
申请日期 |
1977.12.20 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
SCHAIBLE, PAUL M.;SCHWARTZ, GERALDINE C.;ZIELINSKI, LAURA B. |
分类号 |
B01J19/00;C23F1/00;H01L21/027;H01L21/302;H01L21/3065;H01L21/316;H01L21/3213;(IPC1-7):C23F1/02 |
主分类号 |
B01J19/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|