| 摘要 |
PURPOSE:To obtain an excellent optical data recording member excellent in the repeating characteristics of recording and erasure, stable to heat and humidity and sufficiently susceptible to blackening and whitening by semiconductor laser power by providing a TeGeSnSb type composition characterized by that the atomic number ration of Te, Ge and Sn is within a specific region and the concn. of Sb is of specific percentage. CONSTITUTION:An optical data recording member is provided with a composi tion of n=5-40at% when the atomic number ratio of e, Ge and Sn is within a region surrounded by points A(Te93Ge5Sn2), B(Te93Ge2Sn5), C(Te68Ge2Sn3theta), D(Te52Ge18Sn3theta) and E(Te52Ge46Sn2) and the concn. (at% of Sb is represented by (TexGeySnz)mSbn. Sb is added to the composition of Te-Ge-Sn to fix exces sive Te as a compound. Sb forms a compound along with Te and the m.p. of said compound is 622 deg.C(Sb2Te3) at the max. This temp. is lower by 200 deg.C or more than that of Te-Ge or Te-Sn. Therefore, excessive Te can be fixed as a compound without raising the m.p. of the film based on Te. |
