发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
The present invention provides a semiconductor device which includes a substrate having a projection-shaped semiconductor element region, a gate electrode formed through a gate insulating film on the upper face and side face of the element region, and a first conductivity type source region and drain region provided in a manner to form a channel region on the upper face of the element region across the gate electrode, and which has a high concentration impurity region containing a second conductivity type impurity at a concentration higher than that on the surface of the channel region in the central part of the projection-shaped semiconductor element region. |
申请公布号 |
KR0170468(B1) |
申请公布日期 |
1999.02.01 |
申请号 |
KR19950030002 |
申请日期 |
1995.09.14 |
申请人 |
TOSHIBA KK |
发明人 |
MIZUNO, TOMOHISA;USHIKU, YUKIHIRO;YOSHIMI, MAKOTO;TERAUCHI, MAMORU;KAWANAKA, SHIGERU |
分类号 |
H01L29/78;H01L21/336;H01L29/10;H01L29/417;H01L29/423;H01L29/49 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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