发明名称 |
Degradation resistance of semiconductor electroluminescent devices |
摘要 |
The P type conductivity layer or layers of an electroluminescent device includes zinc as the primary conductivity modifier, and germanium as the secondary conductivity modifier. The combination of zinc and germanium provide an electroluminescent device having improved reliability. In the method of fabricating the P type conductivity layer, the zinc and germanium are simultaneously introduced into the layer during deposition of the layer.
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申请公布号 |
US4131904(A) |
申请公布日期 |
1978.12.26 |
申请号 |
US19770811289 |
申请日期 |
1977.06.29 |
申请人 |
RCA CORPORATION |
发明人 |
LADANY, IVAN;KRESSEL, HENRY |
分类号 |
H01L33/30;(IPC1-7):H01L33/00 |
主分类号 |
H01L33/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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