发明名称 |
SEMICONDUCTOR MEMORY |
摘要 |
A programmable nonvolatile FET storage cell comprising crosswise to the ribbonlike source region as well as to the drain region a ribbonlike reading electrode and a separate ribbonlike writing electrode. Both electrodes are disposed upon a gate insulator layer into which a storage medium is embedded which is common to both electrodes. |
申请公布号 |
JPS53148286(A) |
申请公布日期 |
1978.12.23 |
申请号 |
JP19780062810 |
申请日期 |
1978.05.25 |
申请人 |
ITT |
发明人 |
FURITSUTSU GUENTERU ADAMU |
分类号 |
H01L27/112;G11C16/04;H01L21/8246;H01L21/8247;H01L29/417;H01L29/51;H01L29/78;H01L29/788;H01L29/792 |
主分类号 |
H01L27/112 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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