| 发明名称 |
ELECTROSTATIC DESTRUCTION PREVENTING SEMICONDUCTOR ELEMENT |
| 摘要 |
PURPOSE:To secure an assured prevention for destruction of the protected element even at a low input level by narrowing the diffusion layer between the input and output terminals of the emitter diffusion region and increasing the potential difference between these terminals. |
| 申请公布号 |
JPS53144278(A) |
申请公布日期 |
1978.12.15 |
| 申请号 |
JP19770058689 |
申请日期 |
1977.05.23 |
| 申请人 |
HITACHI LTD |
发明人 |
HAIJIMA MIKIO |
| 分类号 |
H01L27/04;H01L21/822;H01L23/50;H01L27/02;H01L27/06;H01L29/78 |
主分类号 |
H01L27/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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