| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device and the semiconductor device itself, whereby even if its polymetal gate electrode is subjected to a heat treatment, the increase in the sheet resistance of its gate electrode can be prevented and enables its gate electrode to be fine. SOLUTION: On the surface of a semiconductor substrate 1, a polycrystal quality or amorphous silicon film 3p is formed via a gate insulating film 2. Since the surface of the silicon film 3p is exposed to the external air, a natural oxide film 9 is generated on its surface. Also, on the silicon film 3p, via the natural oxide film 9, a barrier film 4p made of a metal nitride, having added reduction metal atoms thereto, is formed. On the barrier film 4p, a metal film 5p is formed to be deposited on the metal film 5p a barrier film 6p and an insulation film 7 in succession. When subjecting a gate electrode 8p deposited in this way to heat treatment, the natural oxide film 9 is reduced with the reduction metal atoms to extinguish it, and the nitrogen atoms of the thermally decomposed metal nitride and the reduction metal atoms react with each other in the barrier film 4p to form a barrier metal.
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