METHOD FOR FABRICATING THIN FILM TRANSISTOR ARRAY SUBSTRATE

摘要

A method for manufacturing a TFT array substrate is provided to reduce remarkably the number of mask processes and to improve the efficiency of processing. A gate conduction layer is formed on an insulating substrate(10). A gate electrode(24) is formed on the resultant structure by etching selectively the gate conduction layer using a first photoresist pattern as an etch mask. A gate insulating layer, an amorphous silicon layer, a doped amorphous silicon layer, a data conduction layer and a second photoresist pattern are sequentially deposited on the resultant structure. Source and drain electrodes(65,66) are formed by etching the data conduction layer using the second photoresist pattern as an etch mask. Resistive contact layers(55,56) with the same patterns as those of the source and drain electrodes are formed by etching the doped amorphous silicon layer. A protection layer and a third photoresist pattern are formed on the resultant structure. The protection layer is etched by using the third photoresist pattern as an etch mask. The substrate is exposed to the outside at a pixel region by etching the amorphous silicon layer and the gate insulating layer. A transparent conductive oxide layer is formed on the resultant structure. A pixel electrode is formed on the exposed portion of the substrate by removing the third photoresist pattern and the conductive oxide layer.