| 发明名称 |
MANUFACTURE OF SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To increase the backward dielectric strength by coating in lamination the SiO2 film and Si3O2 film on the Si substrate with an aperture drilled, forming a concavity featuring a gentle slope within the substrate through a selective oxidation given to the exposed substrate, and providing a diffusion layer at the concavity. |
| 申请公布号 |
JPS53136972(A) |
申请公布日期 |
1978.11.29 |
| 申请号 |
JP19770051416 |
申请日期 |
1977.05.04 |
| 申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
YASUNO KOUSUKE;NAKASHIMA TATSUNORI;KAJIWARA KOUSEI |
| 分类号 |
H01L29/73;H01L21/329;H01L21/331;H01L29/861 |
主分类号 |
H01L29/73 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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