发明名称 |
Pattern-forming materials having a radiation sensitive chalcogenide layer and a method of forming patterns with such materials |
摘要 |
A pattern-forming material comprises a substrate and a radiation sensitive chalcogenide layer disposed thereon. The radiation sensitive chalcogenide layer consists of an amorphous layer having a chemical composition of 75 to 95 mol% of selenium and 5 to 25 mol% of germanium and a silver layer superimposed thereon. The pattern-forming materials having the radiation sensitive chalcogenide layer of the invention are particularly useful in lithographic applications.
|
申请公布号 |
US4127414(A) |
申请公布日期 |
1978.11.28 |
申请号 |
US19770804659 |
申请日期 |
1977.06.08 |
申请人 |
NIPPON TELEGRAPH AND TELEPHONE PUBLIC CORPORATION |
发明人 |
YOSHIKAWA, AKIRA;NAGAI, HARUO;OCHI, OSAMU;NAKANO, KAZUKO;MIZUSHIMA, YOSHIHIKO |
分类号 |
G03F1/08;G03F1/54;G03F7/004;(IPC1-7):G03C1/76;G03C1/00;G03C5/00 |
主分类号 |
G03F1/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|