发明名称 C*MOS STATIC RANDOM ACCESS MEMORY
摘要 PURPOSE:To increase the integration degree of the memory by giving a virtual drop to the inverse potential of the C'MOS-structure FF to secure an assured action as well as to enhance the reliability through a simple constitution by setting the supply potential to the earth potential at the writing time.
申请公布号 JPS53135528(A) 申请公布日期 1978.11.27
申请号 JP19770051536 申请日期 1977.04.30
申请人 SHARP KK 发明人 MITSUMOTO TOSHIO;KABURU SETSUSHI
分类号 G11C11/412 主分类号 G11C11/412
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