| 发明名称 |
Method of enhancing the photoconductive properties of a semiconductor |
| 摘要 |
A semiconductor material with photoconductive properties and a method of the semiconductor, wherein a base material is grown and then annealed post-growth at a temperature of 475° C. or less. It has been found that be annealing at temperatures of 475° C., or less the carrier lifetime of the material and the resistivity can be optimized so as to obtain semiconductor with useful photoconductive properties.
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| 申请公布号 |
US7364993(B2) |
申请公布日期 |
2008.04.29 |
| 申请号 |
US20050527313 |
申请日期 |
2005.11.18 |
| 申请人 |
TERAVIEW LIMITED |
发明人 |
EVANS MICHAEL J.;TRIBE WILLIAM R. |
| 分类号 |
H01L21/265;H01L21/00;H01L21/324;H01L21/477;H01L31/0264;H01L31/0304;H01L31/09;H01L31/14;H01L31/18;H01S1/02 |
主分类号 |
H01L21/265 |
| 代理机构 |
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